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4V Drive Nch MOSFET
RSD200N10
? Structure
Silicon N-channel MOSFET
? Features
1) Low on-resistance.
2) Fast switching speed.
3) Wide SOA (safe operating area).
4) Gate-source voltage (V GSS ) guaranteed to be ? 20V.
5) Drive circuits can be simple.
6) Parallel use is easy.
? Dimensions (Unit : mm)
CPT3
? Applications
Switching
? Packaging specifications
Package
Code
Taping
TL
(1)Base(Gate)
(2)Collector(Drain)
(3)Emitter(Source)
? Inner circuit
Type
Basic ordering unit (pieces)
2500
? 2
RSD200N10
? 1
? 1 BODY DIODE
? 2 ESD PROTECTION
DIODE
(1)GATE
(2)DRAIN
(3)SOURCE
? Absolute maximum ratings (Ta=25 ? C)
(1)
(2)
(3)
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
100
± 20
Unit
V
V
Drain current
Source current
(Body Diode)
Avalanche Current
Avalanche Energy
Continuous
Pulsed
Continuous
Pulsed
I D
I DP
I S
I SP
I AS
E AS
? 3
? 1
? 1
? 2
? 2
± 20
± 80
20
80
20
85
A
A
A
A
A
mJ
Total power dissipation (Tc=25 ° C)
Channel temperature
Range of storage temperature
P D
Tch
Tstg
20
150
? 55 to + 150
W
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 L 265 μ H, V DD = 50V, R G = 25 Ω , Starting, Tch = 25 ° C
? 3 Limited only by maximum tempterature allowed
? Thermal resistance
Parameter
Channel to case
Symbol
Rth(ch-c)
Limits
6.25
Unit
° C/W
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c 2012 ROHM Co., Ltd. All rights reserved.
1/3
2012.04 - Rev.B
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